A2T18H450W19S Image

A2T18H450W19S

The A2T18H450W19S from NXP Semiconductors is a RF Transistor with Frequency 1.805 to 1.88 GHz, Power 49.49 dBm, Power(W) 88.92 W, Duty_Cycle 0.1, Power Gain (Gp) 15.5 to 18.5 dB. Tags: Flange. More details for A2T18H450W19S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T18H450W19S
  • Manufacturer
    NXP Semiconductors
  • Description
    1.8GHZ 450W NI1230S-4S4S

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 1.88 GHz
  • Power
    49.49 dBm
  • Power(W)
    88.92 W
  • Pulsed Power
    250 to 420 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    15.5 to 18.5 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 Vdc
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.477
  • Drain Current
    800 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.27 °C/W
  • Package Type
    Flange
  • Package
    NI--1230S--4S4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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