MRF8VP13350N Image

MRF8VP13350N

RF Transistor by NXP Semiconductors

The MRF8VP13350N from NXP Semiconductors is a RF Transistor with Frequency 700 MHz to 1.3 GHz, Power 55.5 dBm, Power(W) 354.81 W, Duty_Cycle 0.2, Power Gain (Gp) 17.5 to 20.5 dB. Tags: Flange. More details for MRF8VP13350N can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MRF8VP13350N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific
  • CW/Pulse
    Pulse, CW
  • Frequency
    700 MHz to 1.3 GHz
  • Power
    55.5 dBm
  • Power(W)
    354.81 W
  • CW Power
    350 W
  • Peak Output Power
    350 W
  • Pulsed Power
    350 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    17.5 to 20.5 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.675
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.04 °C/W
  • Package Type
    Flange
  • Package
    OM--780--4L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.