MRF13750HS Image

MRF13750HS

The MRF13750HS from NXP Semiconductors is a RF Transistor with Frequency 700 MHz to 1.3 GHz, Power 58.13 to 58.75 dBm, Power(W) 749.89 W, P1dB 58.8 dBm, Duty_Cycle 0.2. Tags: Flange. More details for MRF13750HS can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF13750HS
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific, Medical
  • CW/Pulse
    Pulse, CW
  • Frequency
    700 MHz to 1.3 GHz
  • Power
    58.13 to 58.75 dBm
  • Power(W)
    749.89 W
  • CW Power
    650 to 750 W
  • P1dB
    58.8 dBm
  • Peak Output Power
    850 W
  • Pulsed Power
    850 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    19 to 22 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.671
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    NI--1230S--4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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