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LK141

RF Transistor by Polyfet RF Devices
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The LK141 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 0.6 GHz, Power 47.78 dBm, Power(W) 60 W, Gain 10 dB, Power Gain (Gp) 10 dB. Tags: Flanged. More details for LK141 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LK141
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Push Pull Transistor from 1 to 600 MHz

General Parameters

  • Transistor Type
    LDMOS, VDMOS
  • Technology
    Si View all
  • Application Industry
    Military, Broadcast, Cellular, Base Station
  • Application
    FM, MRI Systems
  • Frequency
    1 MHz to 0.6 GHz
  • Power
    47.78 dBm
  • Power(W)
    60 W
  • Gain
    10 dB
  • Power Gain (Gp)
    10 dB
  • Transconductance
    1 MOhms (Forward)
  • VSWR
    1.15:1
  • Supply Voltage
    50 V
  • Drain Gate Voltage
    110 V
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Drain-Source (Vdss)
    110 V
  • Voltage - Gate-Source (Vgs)
    20 V
  • Drain Efficiency
    0.4
  • Drain Current
    9 A
  • Drain Bias Current
    1 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    160 W
  • Feedback Capacitance
    0.7 pF
  • Input Capacitance
    30 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    30 pF
  • Thermal Resistance
    0.90 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Grade
    Military View all
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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