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QPD2560L

RF Transistor by Qorvo
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The QPD2560L from Qorvo is a RF Transistor with Frequency 1.1 to 1.5 GHz, Power 49.7 to 52.5 dBm, Power(W) 93.3 to 177.8 W, Saturated Power 55.4 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD2560L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD2560L
  • Manufacturer
    Qorvo
  • Description
    300 W, GaN on SiC RF Transistor from 1.1 to 1.5 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    ISM, Radar, Broadcast, Communication
  • Application
    Test & Instrumentation, Jammers, Industrial, Electronic Warfare, Military, L Band, Medical, Medical
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.1 to 1.5 GHz
  • Power
    49.7 to 52.5 dBm
  • Power(W)
    93.3 to 177.8 W
  • Saturated Power
    55.4 dBm
  • Pulsed Width
    100 uS
  • Duty_Cycle
    0.1
  • Gain
    15.3 to 18.5 dB
  • Power Added Effeciency
    55.7 to 77.6%
  • Supply Voltage
    50 V (Drain)
  • Input Power
    43 dBm
  • Current
    440 mA (Drain)
  • Drain Efficiency
    55.7 to 77.6%
  • Drain Current
    12 A
  • Quiescent Drain Current
    440 mA
  • Power Dissipation (Pdiss)
    127 to 285 W
  • Package Type
    Flanged View all
  • Dimension
    29 x 5.84 mm
  • RoHS
    Yes
  • Grade
    Military View all
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
View details on the manufacturer's website
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