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FLL57MK

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLL57MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 35.5 to 36 dBm, Power(W) 3.55 to 3.98 W, P1dB 35.5 to 36 dBm, Power Gain (Gp) 10.5 to 11.5 dB. Tags: Flange. More details for FLL57MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLL57MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    2.3 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    L Band
  • Frequency
    2.3 GHz
  • Power
    35.5 to 36 dBm
  • Power(W)
    3.55 to 3.98 W
  • P1dB
    35.5 to 36 dBm
  • Power Gain (Gp)
    10.5 to 11.5 dB
  • Power Added Effeciency
    0.37
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1800 to 2700 mA
  • Thermal Resistance
    6.2 to 7 Degree C/W
  • Package Type
    Flange
  • Package
    MK
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

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