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The IB1011S250 from Integra Technologies, Inc. is a RF Transistor with Frequency 1030 to 1090 MHz, Gain 9.5 dB, Power 54.55 dBm, Input Power 285 W, Supply Voltage 50 V. More details for IB1011S250 can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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