IB1011S70

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011S70 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 48.45 dBm, Power(W) 69.98 W, Duty_Cycle 0.01, Gain 10.4 dB. Tags: Flange. More details for IB1011S70 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB1011S70
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1030 to 1090 MHz, 10.4 dB Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Power :
      48.45 dBm
    • Power(W) :
      69.98 W
    • Peak Output Power :
      70 W
    • Pulsed Width :
      10 us
    • Duty_Cycle :
      0.01
    • Gain :
      10.4 dB
    • Power Gain (Gp) :
      9.4 dB
    • Supply Voltage :
      50 V
    • Breakdown Voltage :
      85 V (Collector Emmiter)
    • Drain Efficiency :
      0.55
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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