Note : Your request will be directed to Integra Technologies, Inc..
The IGN0450M250 from Integra is a high-power P-Band Avionics Transistor that operates from 420 to 450 MHz. It delivers an output power of more than 250 W with a gain of 24 dB and has a drain efficiency of up to 85%. The transistor is designed to suit the unique needs of P-band radar systems. It can handle up to 4 W of input power and has a duty cycle pulse of under 100 µs, 10%. The IGN0450M250 is available in a thermal efficient metal-based package that measures 20.32 x 10.16 x 4.06 mm with an epoxy-sealed ceramic lid. It requires a supply voltage of 50 V.
1600 W LDMOS Power Transistor from 1 to 450 MHz
3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
550 W LDMOS Power Transistor from 2110 to 2180 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
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