IGN0450M250

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The IGN0450M250 from Integra is a high-power P-Band Avionics Transistor that operates from 420 to 450 MHz. It delivers an output power of more than 250 W with a gain of 24 dB and has a drain efficiency of up to 85%. The transistor is designed to suit the unique needs of P-band radar systems. It can handle up to 4 W of input power and has a duty cycle pulse of under 100 µs, 10%. The IGN0450M250 is available in a thermal efficient metal-based package that measures 20.32 x 10.16 x 4.06 mm with an epoxy-sealed ceramic lid. It requires a supply voltage of 50 V.

Product Specifications

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Product Details

  • Part Number
    IGN0450M250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    250 W Power Transistor from 420 to 450 MHz for Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    420 to 450 MHz
  • Power
    53.98 dBm
  • Power(W)
    250 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Gain
    23 to 25 dB
  • Supply Voltage
    50 V
  • Current
    20 mA
  • Drain Efficiency
    70 to 85 %
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C

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