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IGN2931S2700

RF Transistor by Integra Technologies, Inc.
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The IGN2931S2700 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.9 to 3.1 GHz, Power 64.31 dBm, Power(W) 2700 W, Duty_Cycle 0.01, Gain 13.5 to 17.5 dB. Tags: Flanged. More details for IGN2931S2700 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN2931S2700
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    135 W, Power Transistor from 2.9 to 3.1 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar, ISM
  • Application
    S Band View all
  • CW/Pulse
    Pulse View all
  • Frequency
    2.9 to 3.1 GHz
  • Power
    64.31 dBm
  • Power(W)
    2700 W
  • Peak Output Power
    2700 W
  • Pulsed Width
    10µs
  • Duty_Cycle
    0.01
  • Gain
    13.5 to 17.5 dB
  • Power Gain (Gp)
    16 dB
  • Efficiency
    45 to 65 % (Drain)
  • Input Return Loss
    6 to 25 dB
  • VSWR
    1.20:1, 1.50:1
  • Supply Voltage
    125 V
  • Input Power
    135 W
  • Voltage - Drain-Source (Vdss)
    350 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    45 to 65 %
  • Drain Current
    72 A
  • Thermal Resistance
    0.044 C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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