ILD1011M1000HVE Image

ILD1011M1000HVE

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The ILD1011M1000HVE from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 GHz, Power 60 to 61.14 dBm, Power(W) 1300.17 W, Duty_Cycle 0.02, Gain 18 dB. Tags: Flange. More details for ILD1011M1000HVE can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD1011M1000HVE
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.03 GHz, LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 GHz
  • Power
    60 to 61.14 dBm
  • Power(W)
    1300.17 W
  • Pulsed Width
    50 us
  • Duty_Cycle
    0.02
  • Gain
    18 dB
  • Power Gain (Gp)
    17 to 18.5 dB
  • Supply Voltage
    50 V
  • Input Power
    20 W
  • Breakdown Voltage - Drain-Source
    92 V
  • Voltage - Gate-Source (Vgs)
    1.75 to 5.25 V
  • Quiescent Drain Current
    60 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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