The A2G22S251-01S is a 48 Watt RF Power GaN Transistor that operates from 1805 to 2200 MHz. This GaN Transistor is part of NXP's Airfast family of transistors. In a symmetric Doherty, it delivers an average RF output power of 71 W (450 W peak), gain of 16.5 dB, and drain efficiency of 46% in concurrent multiband operation at 8 dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.

Product Specifications

  • Part Number
    A2G22S251-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 2.2 GHz
  • Power
    46.81 dBm
  • Power(W)
    47.97 W
  • CW Power
    170 to 250 W
  • Pulsed Power
    170 to 250 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16.2 to 19.2 dB
  • Input Return Loss
    -12 to -5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 Vdc
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 V
  • Drain Efficiency
    0.375
  • Drain Current
    200 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.3 °C/W
  • Package Type
    Flange
  • Package
    NI--400S--2S
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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