The A2G22S251-01S is a 48 Watt RF Power GaN Transistor that operates from 1805 to 2200 MHz. This GaN Transistor is part of NXP's Airfast family of transistors. In a symmetric Doherty, it delivers an average RF output power of 71 W (450 W peak), gain of 16.5 dB, and drain efficiency of 46% in concurrent multiband operation at 8 dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.

Product Specifications

  • Part Number
    A2G22S251-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    48 Watt RF Power GaN Transistor from 1805 to 2200 MHz RF
  • Transistor Type
  • Application
    4G, WCDMA
  • Application Type
    Radar, Commercial, Cellular, EMC Testing, Medical, Jammers, Radio, Wireless Infrastructure, Base Stations
  • Class
    AB
  • Grade
    Commercial, Aerospace
  • Frequency
    1.805 to 2.2 GHz
  • Gain
    17.7 dB @ 2170 MHz
  • Power
    46 dBm
  • P1dB
    52 dBm (158 Watts)
  • Supply Voltage
    48 V
  • Technology
    GaN
  • Effeciency
    0.375
  • Matching
    Input
  • Thermal Resistance
    1.3 Degree C/W
  • Package Type
    Flanged, Ceramic
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