The AFT09MS031N from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 941 MHz, Power 44.91 dBm, Power(W) 30.97 W, P1dB 44.9 dBm, Power Gain (Gp) 17.2 dB. Tags: Flange. More details for AFT09MS031N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      AFT09MS031N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Mobile, Radio
    • CW/Pulse :
      CW
    • Frequency :
      1.8 to 941 MHz
    • Power :
      44.91 dBm
    • Power(W) :
      30.97 W
    • CW Power :
      31 W
    • P1dB :
      44.9 dBm
    • Power Gain (Gp) :
      17.2 dB
    • VSWR :
      65.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      13.6 V
    • Threshold Voltage :
      1.6 to 2.6 Vdc
    • Voltage - Gate-Source (Vgs) :
      -6 to 12 Vdc
    • Drain Efficiency :
      0.71
    • Drain Current :
      500 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.63 °C/W
    • Package Type :
      Flange
    • Package :
      TO--270--2 PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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