1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. RFHIC
  6. ID49531D

ID49531D

RF Transistor by RFHIC
73 more products from this company
Visit company website
Request Quote

Note : Your request will be directed to RFHIC.

ID49531D Image

The ID49531D from RFHIC is a GaN-on-SiC HEMT that operates from 4800 to 5000 MHz. It delivers a saturated output power of 468 W with a power gain of 13.3 dB and a drain efficiency of 41%. This transistor is internally matched to 50-ohms and is designed to provide high efficiency and linearity. It requires a DC supply of 48 V.   It is available in an RF24009DKR3 flanged package and is ideal for WiMAX, 4G LTE, 5G NR, WCDMA, GSM, multi-band, multi-mode, multi-carrier and high-efficiency Doherty amplifier applications.

Product Specifications

View similar products

Product Details

  • Part Number
    ID49531D
  • Manufacturer
    RFHIC
  • Description
    468 W GaN-on-SiC HEMT from 4800 to 5000 MHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Cellular View all
  • Application
    5G, 4G / LTE, GSM, WiMax
  • Frequency
    4800 to 5000 MHz
  • Saturated Power
    468 W
  • Gain
    13.3 dB
  • Efficiency
    41 %
  • Supply Voltage
    48 V
  • Package Type
    Flanged View all
  • Grade
    Commercial View all
  • Note
    Spurious: -26.1 dBc
View details on the manufacturer's website
View similar products