FHC30LG

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FHC30LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 4 GHz, Gain 14.5 dB, Noise Figure 0.35 dB, Supply Voltage 2 V, Drain Current 10 mA. Tags: Flanged. More details for FHC30LG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FHC30LG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    4 GHz, 14.5 dB Gain GaAs HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaAs
  • Frequency
    4 GHz
  • Gain
    14.5 dB
  • Noise Figure
    0.35 dB
  • Supply Voltage
    2 V
  • Drain Current
    10 mA
  • Package Type
    Flanged
  • Package
    LG
  • Dimension
    4.78 × 4.78 × 1.3
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