SGN2729-250H-R Image

SGN2729-250H-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGN2729-250H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 53.97 to 55.05 dBm, Power(W) 250 to 320 W, Power Gain (Gp) 13 to 14 dB, VSWR 10.00:1. Tags: Flanged. More details for SGN2729-250H-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGN2729-250H-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.7 to 2.9 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      2.7 to 2.9 GHz
    • Power :
      53.97 to 55.05 dBm
    • Power(W) :
      250 to 320 W
    • Pulsed Width :
      120 usec
    • Power Gain (Gp) :
      13 to 14 dB
    • VSWR :
      10.00:1
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.1 to 1.35 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Forward Gate Current : 365 mA, Reverse Gate Current : -9 mA

    Technical Documents

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