WP48007104

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP48007104 from WAVEPIA is a RF Transistor with Frequency DC to 8 GHz, Saturated Power 104 W, Small Signal Gain 12 to 14 dB, Power Gain (Gp) 14 dB, VSWR 10.00:1. Tags: Die. More details for WP48007104 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP48007104
    • Manufacturer :
      WAVEPIA
    • Description :
      104 W, GaN HEMT Transistor from DC to 8 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Cellular, Wireless Infrastructure
    • Application Type :
      WiMAX, LTE, WCDMA, GSM, Base Station, Communication, Drone, UAV, WPT, 5G, V2X
    • CW/Pulse :
      CW
    • Frequency :
      DC to 8 GHz
    • Saturated Power :
      104 W
    • Small Signal Gain :
      12 to 14 dB
    • Power Gain (Gp) :
      14 dB
    • Transconductance :
      290 mS/mm
    • VSWR :
      10.00:1
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3.4 V
    • Breakdown Voltage :
      160 V
    • Drain Efficiency :
      60%
    • Drain Current :
      1000 mA/mm
    • Quiescent Drain Current :
      600 mA
    • IMD :
      -30 dBc
    • Junction Temperature (Tj) :
      225 Degree C
    • Package Type :
      Die
    • Dimension :
      3710 x 850 um
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Drain Source Current :1000 mA/mm, Ohmic contact resistance : 0.3 Ohms

    Technical Documents

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